leedemon 发表于 2012-4-12 19:25
嘿,蛋痛瞎说说,全当参考。
上面也说到了线宽这个概念,基本上这个就是开关的长度。IC里面电路工作机制 ...
汗,上面说的有问题,刚刚搜了一下,补充一下
Besides line width, some other parameters are also reduced with scaling such as the
MOSFET gate oxide thickness and the power supply voltage. The reductions are chosen
such that the transistor current density (Ion/W) increases with each new node. Also, the smaller transistors and shorter interconnects lead to smaller capacitances. Together, these
changes cause the circuit delays to drop (Eq. 6.7.1). Historically, integrated circuit speed
has increased roughly 30% at each new technology node.
大意如下:使用更小的线宽,还能减少其他的参数,包括MOS gate氧化物的密度和电源电压。这样也就提高了晶体管电流密度(Ion/W) 。更小的晶体管和更短的互连线可以获得更小的电容。这些变化可以让电路延迟变小。从历史看,每次工艺的提升可以让电路速度提高30%。
原文地址:http://www-inst.eecs.berkeley.edu/~ee130/sp06/chp7full.pdf |