4k性能下降,价格持平
The random read and write IOPS numbers for 4K blocks are 40,000 and 50,000 (40K/50K) for the 512GB and 256GB products, 40K/35K for 128GB, and 40K/20K for 64GB. http://www.theregister.co.uk/2011/01/04/micron_realssd_c400/作者: iucas 时间: 2011-1-5 09:50
还好没等C400,及时入手C300真是明智啊。作者: westmere 时间: 2011-1-5 10:04
成了和intel g3一样货色的东西,4k甚至更烂。c300骄傲的60K 读取iops没了。作者: phoenixes 时间: 2011-1-5 11:12 本帖最后由 phoenixes 于 2011-1-5 11:15 编辑
Despite using IMFT’s 25nm NAND (at roughly 3,000 program/erase cycles per NAND cell), Micron claims the C400 will last for at least 72TB of writes over its lifetime which is identical to how long Micron claims the C300 will last. I asked Micron why the C400 didn’t incur any endurance penalty with the switch to 25nm, its answer was simple: the C300 was conservatively rated. Even though the C300 NAND cells will last longer, both it and the C400 will at least make it to Micron’s 72TB rating. Micron also mentioned to me that it writes more than 72TB of data to its drives during development, so this is a verified rating.