Some questions for 25nm IMFT NAND flash

First let me introduce, my name is Jan Černý and I work as SSD reviewer for Czech web magazine: http://extrahardware.cnews.cz/ (in the past I working for http://pctuning.tyden.cz/hardware/30)

I can't speak Chinese (only using Google translate).

I working on Kingston HyperX SSD review.

This SSD have Intel 29F16B08CCME2 NAND flash chips. This document says:  

• 25nm MLC Intel
• ONFi v2.2
• 2 die, 2 CE, 2 R/B, common I/O
• 5000 Program/Erase cycles
• asynchronous mode only

But local PR:

after speaking also to R&D we don't give out those specifics. I can tell u that it is synchronous NAND w. 5000PE cycle endurance - everything else is internal only.

Intel SSD 320 have 29F16B08CCME1 and Anand says: http://bit.ly/r3yy9f

ONFi v2.1
asynchronous mode only

Which information is correct? It's only different version (1=synchronous; 2=synchronous)?

Hi Jan Černý,




The Different between asynchronous & synchronous NAND is IO Voltage ( 3.3V vs 1.8V ).

The red C in the picture means Synchronous.

You can check the part number :

Kingston HyperX : 29F16B08CCME2
Intel 320 : 29F16B08CCME1

They are all Synchronous NAND . The 1 & 2 just generation number.

In my experience, The asynchronous & synchronous NAND use the Same Die, Intel just mark the part number for different marketing( Maybe they do more stable test on Synchronous NAND) . That mean you can force the asynchronous NAND to run synchronous Mode.

Best Regards

Joseph

浴大，有没有机会评测一下 Kingston HyperX SSD {:1_324:}

原来Kingston HyperX SSD用的依旧是INTEL的东西啊。

Thank you for answer. Here is another interesting informations about Micron:
http://forums.anandtech.com/show ... 183440#post32183440